ST(B,P,W)6NK90Z, STP6NK90ZFP دیتاشیت

ST(B,P,W)6NK90Z, STP6NK90ZFP

مشخصات دیتاشیت

نام دیتاشیت ST(B,P,W)6NK90Z, STP6NK90ZFP
حجم فایل 669.261 کیلوبایت
نوع فایل pdf
تعداد صفحات 26

دانلود دیتاشیت ST(B,P,W)6NK90Z, STP6NK90ZFP

دانلود دیتاشیت

سایر مستندات

STP6NK90Z 26 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STB6NK90ZT4
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 140W
  • Total Gate Charge (Qg@Vgs): 60.5nC@10V
  • Drain Source Voltage (Vdss): 900V
  • Input Capacitance (Ciss@Vds): 1350pF@25V
  • Continuous Drain Current (Id): 5.8A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@100uA
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 2Ω@2.9A,10V
  • Package: TO-263-3
  • Manufacturer: STMicroelectronics
  • Series: SuperMESH™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2Ohm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 60.5nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Base Part Number: STB6N
  • detail: N-Channel 900V 5.8A (Tc) 140W (Tc) Surface Mount D2PAK